The width of depletion region is dependent on ___________ of semiconductor.

Optoelectronics and Optical Communication 

The width of depletion region is dependent on ___________ of semiconductor.

a) Doping concentrations for applied reverse bias 
b) Doping concentrations for applied forward bias 
c) Properties of material 
d) Amount of current provided

Answer : - Doping concentrations for applied reverse bias

The depletion region is formed by immobile positively and immobile negatively charged donor and acceptor atoms in n- and p-type respectively. When carriers are swept towards majority side under electric field, lower the doping, wider the depletion region.